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| polyfet rf devices LC421 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 25.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance o 1.30 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 36 V Drain to Source Voltage 36 V Gate to Source Voltage 20 V 7.0 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 8 65 TYP 25.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.20 A, Vds = 12.5 V, F = Idq = 0.20 A, Vds = 12.5 V, F = 500 MHz 500 MHz VSWR Relative Idq = 0.20 A, Vds = 12.5 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 2.7 0.28 17.00 80.0 5.0 60.0 MIN 36 1.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.25 mA, Vgs = 0V Vds = 12.5 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.30 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 8.00 A Vgs = 20V, Vds = 10V Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com LC421 POUT VS PIN GRAPH LC421 Pin vs Pout Freq=500MHz, VDS=12.5V, Idq=.6A 30 13.00 1000 25 12.00 CAPACITANCE VS VOLTAGE L4 1DIE CAPACITANCE Pout 20 11.00 100 Ciss Coss Efficiency = 75% 15 10.00 9.00 10 10 Gain 5 8.00 7.00 1 Crss 0 5 10 15 20 25 30 0 0 1 2 3 4 5 6 7 Pin in Watts 6.00 VDS IN VOLTS IV CURVE L4 1 DIE IV 18 16 14 12 ID IN AMPS 10 8 6 4 2 0 0 2 4 6 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20 0.1 0 2 4 1 10 100 ID & GM VS VGS L4 1 DIE ID, GM vs VG ID G vg=2v Vg=4v vg=10v vg=12v Vgs in Volts 6 8 10 12 14 S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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